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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3055H DESCRIPTION *Excellent Safe Operating Area *DC Current Gain-hFE=20-70@IC = 4A *Collector-Emitter Saturation Voltage: VCE(sat)= 1.1 V(Max)@ IC = 4A APPLICATIONS *Designed for general-purpose switching and amplifier Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCER VCEO VEBO IC IB PC TJ Tstg PARAMETER Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Base Current Collector Power Dissipation@TC=25 Junction Temperature Storage Temperature VALUE 100 70 100 7 15 7 115 200 -65~200 UNIT V V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX 1.52 UNIT /W isc Websitewww.iscsemi.cn 1 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL VCEO(SUS) VCER(SUS) VCE(sat)-1 VCE(sat)-2 VBE(on) ICEO ICEX IEBO hFE-1 hFE-2 Is/b fT PARAMETER Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Collector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Second Breakdown Collector Current with Base Forward Biased Current Gain-Bandwidth Product CONDITIONS IC=200mA ; IB=0 IC=200mA ; RBE=100 IC= 4A; IB= 0.4A IC= 10A; IB= 3.3A IC= 4A ; VCE= 4V VCE= 30V; IB=0 VCE= 100V; VBE(off)= 1.5V VCE= 100V; VBE(off)= 1.5V,TC=150 VEB= 7.0V; IC=0 IC= 4A ; VCE= 4V IC= 10A ; VCE= 4V VCE= 40V,t= 1.0s,Nonrepetitive IC= 0.5A ; VCE= 10V;f=1.0MHz 20 5.0 2.87 2.5 MIN 100 70 2N3055H MAX UNIT V V 1.1 3.0 1.5 0.7 1.0 5.0 5.0 70 V V V mA mA mA A MHz isc Websitewww.iscsemi.cn 2 |
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